Please use this identifier to cite or link to this item: http://dspacetest.aaup.edu/jspui/handle/123456789/3513
Title: Electrical conductivity and Hall mobility in p-type TlGaSe2 crystals
Authors: qasrawi
af
gasanly
nm
Keywords: semiconductors; Chalcogenides; layered compounds; defects; electrical properties
Issue Date: 2004
Publisher: MATERIALS RESEARCH BULLETIN
Abstract: Systematic dark electrical conductivity and Hall mobility measurements have been carried out in the temperature range of 200-350 K on p-type TlGaSe2 crystals. The analysis of the temperature-dependent electrical conductivity and carrier concentration reveals the extrinsic type of conduction with an acceptor impurity level located at 0.33 eV, and donor and acceptor concentrations of 9.0 x 10(15) and 1.3 x 10(16) cm(-3), respectively. A hole and electron effective masses of 0.520m(0) and 0.325m(0), respectively, with a donor to acceptor compensating ratio of 0.69 are also being identified. The Hall mobility is found to be limited by the hole-phonon short-range interactions scattering with a hole-phonon coupling constant of 0.17. (C) 2004 Elsevier Ltd. All rights reserved.
URI: http://dspacetest.aaup.edu/jspui/handle/123456789/3513
Appears in Collections:Faculty & Staff Scientific Research publications

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